cmdd6001 surface mount ultra low leakage silicon switching diode description: the central semiconductor cmdd6001 type is a silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a supermini tm surface mount package, designed for switching applications requiring a extremely low leakage diode. maximum ratings: (t a =25c) symbol units continuous reverse voltage v r 75 v peak repetitive reverse voltage v rrm 100 v continuous forward current i f 250 ma peak repetitive forward current i frm 250 ma peak forward surge current, tp=1.0s i fsm 4.0 a peak forward surge current, tp=1.0s i fsm 1.0 a power dissipation p d 250 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 500 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i r v r =75v 500 pa bv r i r =100a 100 v v f i f =1.0ma 0.85 v v f i f =10ma 0.95 v v f i f =100ma 1.1 v c t v r =0, f=1.0mhz 2.0 pf t rr i r =i f =10ma, i rr =1.0ma, r l =100 3.0 s marking code: c61 sod-323 case r5 (9-may 2011) www.centralsemi.com
cmdd6001 surface mount ultra low leakage silicon switching diode lead code: 1) cathode 2) anode marking code: c61 sod-323 case - mechanical outline www.centralsemi.com r5 (9-may 2011)
|
